Implantation damage effect on boron annealing behavior using low-energy polyatomic ion implantation

Applied Physics Letters

Volumn 76, Issue 5, 2000, Pages 574-576

  Jin, Jian Yue ^a   Liu, Jiarui ^a   Van Der Heide, Paul A W ^a   Chu, Wei Kan ^b  

^a UNIVERSITY OF HOUSTON   (United States)

^b University of Houston   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000768019     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.125821     Document Type: Article

References (12)

1. C. Rinn Cleavlin, B. C. Covington, and L. A. Larson, 5th International Workshop on the Measurement, Characterization, and Modeling of Ultra-Shallow Doping Profiles in Semiconductors (USJ99).
2. M. D. Giles, J. Electrochem. Soc. 138, 1160 (1991).
3. P. A. Stolk, H.-J. Gossmann, D. J. Eaglesham, D. C. Jacobson, C. S. Rafferty, G. H. Gilmer, M. Jaraiz, J. M. Poate, H. S. Luftman, and T. E. Haynes, J. Appl. Phys. 81, 6031 (1997).
4. J. Li and K. S. Jones, Appl. Phys. Lett. 73, 3748 (1998).
5. A. Claverie, L. F. Giles, M. Omri, B. de Mauduit, G. B. Assayag, and D. Mathiot, Nucl. Instrum. Methods Phys. Res. B 147, 1 (1999).
6. A. D. Lilak, S. K. Earles, M. E. Law, and K. S. Jones, Appl. Phys. Lett. 74, 2038 (1999).
7. E. Schroer, V. Privitera, F. Priolo, E. Napolitani, and A. Camera, Appl. Phys. Lett. 74, 3996 (1999).
8. L. Pelaz, G. H. Gilmer, H.-J. Gossmann, C. S. Rafferty, M. Jaraiz, and J. Barbolla, Appl. Phys. Lett. 74, 3657 (1999).
9. M. B. Huang and I. V. Mitchell, J. Appl. Phys. 85, 174 (1999).
10. M. C. Ridgway, P. J. Scanlon, and J. L. Whitton, J. Appl. Phys. 62, 3682 (1987).
11. J. W. Mayer and E. Rimini, Ion Beam Handbook for Material Analysis (Academic, New York, 1977).
12. C. Z. Hitzmann (private communication).