Inductively coupled plasma reactive ion etching of SiC Single crystals using NF3-based gas mixtures

Journal of Electronic Materials

Volumn 32, Issue 1, 2003, Pages 1-4

  Choi, Hyun Joon ^a   Lee, Byung Teak ^a  

^a Chonnam National University   (South Korea)

Author keywords

Etching; ICP; NF3; SiC

Indexed keywords

INDUCTIVELY COUPLED PLASMA; PHOTORESISTS; REACTIVE ION ETCHING; SILICON CARBIDE; SUBSTRATES;

GAS MIXTURES;

SINGLE CRYSTALS;

EID: 0037240563     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-003-0244-6     Document Type: Article

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