High quality partially relaxed SiGe film grown on silicon-on-insulator substrate by ultra-high vacuum chemical vapor deposition

Metals and Materials International

Volumn 10, Issue 3, 2004, Pages 281-284

  Chen, Changchun ^a   Huang, Wentao ^a   Liu, Zhihong ^a   Wang, Juin ^a   Xiong, Xiaoyi ^a   Shan, Yilin ^a   Zhang, Wei ^a   Zhu, Jun ^a   Tsien, Pei Hsin ^a  

^a TSINGHUA UNIVERSITY   (China)

Author keywords

High resolution X ray diffraction; Raman; Rutherford backscattering channeling (RBS C); SiGe on insulator (SGOI); Ultra high chemical vapor deposition (UHVCVD)

Indexed keywords

BACKSCATTERING; CHEMICAL VAPOR DEPOSITION; MOSFET DEVICES; RAMAN SPECTROSCOPY; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEMICONDUCTOR INSULATOR BOUNDARIES; SILICON ON INSULATOR TECHNOLOGY; SUBSTRATES; TENSILE STRAIN; ULTRAHIGH VACUUM; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS;

HIGH RESOLUTION X RAY DIFFRACTION; RAMAN; RUTHERFORD BACKSCATTERING/CHANNELING; SIGE ON INSULATOR; UHV-CVD;

SI-GE ALLOYS;

EID: 11144289990     PISSN: 15989623     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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