SiGe-on-insulator (SGOI): Substrate preparation and MOSFET fabrication for electron mobility evaluation

IEEE International SOI Conference

Volumn , Issue , 2001, Pages 13-14

  Cheng, Z Y ^a   Currie, M T ^a   Leitz, C W ^a   Taraschi, G ^a   Pitera, A ^a   Lee, M L ^a   Langdo, T A ^a   Hoyt, J L ^a   Antoniadis, D A ^a   Fitzgerald, E A ^a  

^a USA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CHEMICAL MECHANICAL POLISHING; CHEMICAL VAPOR DEPOSITION; ELECTRON MOBILITY; ETCHING; MOSFET DEVICES; SEMICONDUCTING FILMS; SILICON WAFERS; SUBSTRATES; X RAY DIFFRACTION ANALYSIS;

ELECTRON MOBILITY ENHANCEMENTS;

SILICON ON INSULATOR TECHNOLOGY;

EID: 0035163925     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (3)