Fabrication of a strained is on sub-10-nm-thick SiGe-on-insulator virtual substrate

Materials Science and Engineering: B

Volumn 89, Issue 1-3, 2002, Pages 360-363

  Tezuka, T ^a   Sugiyama, N ^a   Takagi, S ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

Lattice relaxation; Metal oxide semiconductor field effect transistors; SiGe; Silicon on insulator; Strained Is

Indexed keywords

EPITAXIAL GROWTH; FABRICATION; LATTICE CONSTANTS; MOSFET DEVICES; OXIDATION; SEMICONDUCTING SILICON COMPOUNDS; STRAIN; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY;

VIRTUAL SUBSTRATES (VS);

SILICON ON INSULATOR TECHNOLOGY;

EID: 0037074871     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(01)00774-7     Document Type: Conference Paper

References (16)