Determination of densities and energy levels of donors in free-standing undoped 3C-SIC epilayers with thicknesses of 80 μm

Journal of Applied Physics

Volumn 96, Issue 12, 2004, Pages 7346-7351

  Matsuura, Hideharu ^a   Nagasawa, Hiroyuki ^b   Yagi, Kuniaki ^b   Kawahara, Takamitsu ^b  

^a OSAKA ELECTRO COMMUNICATION UNIVERSITY   (Japan)

^b HOYA Advanced Semiconductor Technologies Co Ltd   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON; CARRIER CONCENTRATION; COMPUTER SIMULATION; DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRIC VARIABLES MEASUREMENT; ELECTRON ENERGY LEVELS; HALL EFFECT; MOSFET DEVICES; THICKNESS MEASUREMENT;

DONOR DENSITY; EPILAYERS; HALL EFFECT MEASUREMENT; ISOTHERMAL CAPACITANCE TRANSIENT SPECTROSCOPY (ICTS);

SILICON CARBIDE;

EID: 11144243176     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1814805     Document Type: Article

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