A percolation based dielectric breakdown model with randomic changes in the dielectric constant

Physica A: Statistical Mechanics and its Applications

Volumn 305, Issue 3-4, 2002, Pages 351-359

  Sombra, Sergio S ^a   Costa, Uriel M S ^a   Freire, Valder N ^a   De Vasconcelos, E A ^b   Da Silva Jr , Eronildes F ^b  

^a FEDERAL UNIVERSITY OF CEARÁ   (Brazil)

^b FEDERAL UNIVERSITY OF PERNAMBUCO   (Brazil)

Author keywords

Dielectric breakdown; Dynamic percolation model; Semiconductor devices; SiO2 oxide

Indexed keywords

ELECTRIC BREAKDOWN; ELECTRIC FIELD EFFECTS; PERMITTIVITY; WEIBULL DISTRIBUTION;

DIELECTRIC BREAKDOWN;

MOS CAPACITORS;

EID: 0037086222     PISSN: 03784371     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0378-4371(01)00615-X     Document Type: Article

References (18)