Silicon carbide FETs for high temperature nuclear environments

IEEE Transactions on Nuclear Science

Volumn 43, Issue 3 PART 2, 1996, Pages 1642-1648

  Scozzie, C J ^a   McGarrity, J M ^a   Blackburn, J ^a   DeLancey, W M ^a  

^a U S ARMY RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; DOSIMETRY; GATES (TRANSISTOR); HIGH TEMPERATURE EFFECTS; NEUTRON IRRADIATION; NUCLEAR PHYSICS; NUCLEAR REACTORS; RADIATION DAMAGE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DOPING; SILICON CARBIDE; SUBSTRATES;

CONDUCTING CHANNEL; DOPING DENSITY; NEUTRON DISPLACEMENT DAMAGE; NEUTRON FLUENCE; SILICON CARBIDE FIELD EFFECT TRANSISTORS;

JUNCTION GATE FIELD EFFECT TRANSISTORS;

EID: 0030169885     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/23.507163     Document Type: Article

References (8)

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