The statistical distribution of percolation current for soft breakdown in ultrathin gate oxide

IEEE Electron Device Letters

Volumn 24, Issue 5, 2003, Pages 336-338

  Lin, W H ^a   Pey, K L ^a,b   Dong, Z ^a,c   Chooi, S Y M ^a,c   Ang, C H ^a,c   Zheng, J Z ^a,c  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^c CHARTERED SEMICONDUCTOR MANUFACTURING LTD   (Singapore)

Author keywords

Percolation path; Soft breakdown; Ultrathin gate oxide; Weibull distribution

Indexed keywords

ANNEALING; CAPACITANCE; CURRENT VOLTAGE CHARACTERISTICS; OXIDATION; OXIDES; POLYSILICON; QUANTUM THEORY; WEIBULL DISTRIBUTION;

LOG NORMAL DISTRIBUTION; RAPID THERMAL OXIDATION; SOFT BREAKDOWN; ULTRATHIN GATE OXIDE; VOLTAGE STRESSING;

MOS CAPACITORS;

EID: 0043175331     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2003.812553     Document Type: Article

References (12)

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