Control on the formation of Si nanodots fabricated by thermal annealing/oxidation of hydrogenated amorphous silicon

Journal of Applied Physics

Volumn 96, Issue 12, 2004, Pages 7532-7536

  Hazra, Sukti ^a,b   Sakata, Isao ^a   Yamanaka, Mitsuyuki ^a   Suzuki, Eiichi ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b UNIVERSITY OF DELAWARE   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLINE GRAINS; NONVOLATILE MEMORY; PARACRYSTALLITES;

AMORPHOUS SILICON; CHEMICAL VAPOR DEPOSITION; CRYSTALLIZATION; FABRICATION; HYDROGENATION; QUANTUM THEORY; RAPID THERMAL ANNEALING; ULTRATHIN FILMS;

NANOSTRUCTURED MATERIALS;

EID: 11044233416     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1814172     Document Type: Article

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