Nanostructured silicon formations as a result of ionized N2 gas reactions on silicon with native oxide layers

Applied Physics Letters

Volumn 82, Issue 21, 2003, Pages 3653-3655

  Jung, Min Cherl ^a,b   Lee, Tae Gyoung ^a   Park, Young Ju ^a   Jun, Sung Ho ^b   Lee, Joosang ^b   Man, Moonsup ^b   Jeong, Jong Seok ^c   Lee, Jeong Yong ^c  

^a Korea Institute of Science and Technology   (South Korea)

^b University of Seoul   (South Korea)

^c NONE

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; ELECTRONIC STRUCTURE; HIGH RESOLUTION ELECTRON MICROSCOPY; IONIZATION OF GASES; MORPHOLOGY; NITROGEN; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; RAPID THERMAL ANNEALING; SEMICONDUCTING SILICON; SURFACE TREATMENT; TRANSMISSION ELECTRON MICROSCOPY; ULTRAHIGH VACUUM; X RAY PHOTOELECTRON SPECTROSCOPY;

PHYSICOCHEMICAL MODIFICATION;

NANOSTRUCTURED MATERIALS;

EID: 0037631473     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1579124     Document Type: Article

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