Analysis of carrier generation lifetime in strained-Si/SiGe heterojunction MOSFETs from capacitance transient

Applied Surface Science

Volumn 224, Issue 1-4, 2004, Pages 278-282

  Bera, L K ^a   Mathew, Shajan ^a   Balasubramanian, N ^a   Braithwaite, G ^b   Currie, M T ^b   Singaporewala, F ^b   Yap, J ^b   Hammond, R ^b   Lochtefeld, A ^b   Bulsara, M T ^b   Fitzgerald, E A ^b  

^a INSTITUTE OF MICROELECTRONICS   (Singapore)

^b AmberWave Systems Corporation   (United States)

Author keywords

Band offset; Generation lifetime; Heterostructure; SiGe; Strained Si

Indexed keywords

CAPACITANCE; DEFORMATION; HETEROJUNCTIONS; INTERFACES (MATERIALS); LATTICE CONSTANTS; SILICON; SILICON COMPOUNDS; STRAIN;

BAND OFFSET; GENERATION LIFETIME; SIGE; STRAINED-GE;

MOSFET DEVICES;

EID: 10744222423     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2003.08.054     Document Type: Conference Paper

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