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Applied Physics A: Materials Science and Processing

Volumn 80, Issue 2, 2005, Pages 321-324

Thermal stability and electrical properties of Zr silicate films for high-k gate-dielectric applications, as prepared by pulsed laser deposition

(5) Zhu, J a Liu, Z G a Zhu, M a Yuan, G L a Liu, J M a

a NANJING UNIVERSITY (China)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CMOS INTEGRATED CIRCUITS; CRYSTALLIZATION; DIELECTRIC MATERIALS; DIFFERENTIAL THERMAL ANALYSIS; GRAIN BOUNDARIES; LEAKAGE CURRENTS; MOSFET DEVICES; PHASE SEPARATION; PULSED LASER DEPOSITION; SILICATES; THERMODYNAMIC STABILITY; THIN FILMS;

EQUIVALENT OXIDE THICKNESSES (EOT); INTERFACIAL LAYERS; K-GATE-DIELECTRICS; METAL INSULATOR METAL (MIM);

ZIRCONIUM COMPOUNDS;

EID: 10644243531 PISSN: 09478396 EISSN: None Source Type: Journal
DOI: 10.1007/s00339-003-2187-4 Document Type: Article

Times cited : (10)

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