Hall and field-effect mobilities of electrons accumulated at a lattice-matched ZnO/ScAlMgO4 heterointerface

Advanced Materials

Volumn 16, Issue 21, 2004, Pages 1887-1890

  Suzuki, Takao I ^a   Ohtomo, Akira ^a   Tsukazaki, Atsushi ^a   Sato, Futami ^b   Nishii, Jyunya ^b   Ohno, Hideo ^b   Kawasaki, Masashi ^a  

^a TOHOKU UNIVERSITY   (Japan)

^b TOHOKU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CARRIER CONCENTRATION; CRYSTALLINE MATERIALS; ELECTRON DIFFRACTION; ELECTRONS; EPITAXIAL GROWTH; FIELD EFFECT TRANSISTORS; GRAIN BOUNDARIES; HALL EFFECT; SINGLE CRYSTALS; ZINC OXIDE;

DIELECTRIC GATE; FIELD-EFFECT MOBILITY; HETEROINTERFACES; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION (RHEED);

CARRIER MOBILITY;

EID: 10444244965     PISSN: 09359648     EISSN: None     Source Type: Journal    
DOI: 10.1002/adma.200401018     Document Type: Article

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