Diffusion of ion beam injected self-interstitial defects in silicon layers grown by molecular beam epitaxy

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 216, Issue 1-4, 2004, Pages 286-290

  De Salvador, D ^a   Napolitani, E ^a   Mirabella, S ^b   Impellizzeri, G ^b   Priolo, F ^b   Terrasi, A ^b   Bisognin, G ^a   Berti, M ^a   Drigo, A V ^a   Carnera, A ^a  

^a UNIVERSITY OF PADOVA   (Italy)

^b UNIVERSITY OF CATANIA   (Italy)

Author keywords

Diffusion; Self interstitials; Trapping

Indexed keywords

ANNEALING; CRYSTAL DEFECTS; DIFFUSION IN SOLIDS; ION BEAMS; ION IMPLANTATION; MATHEMATICAL MODELS; MOLECULAR BEAM EPITAXY; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR DOPING; SUPERSATURATION;

SELF-INTERSTITIALS; TRAPPINGS;

SILICON;

EID: 1042288900     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2003.11.048     Document Type: Conference Paper

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