Modeling of self-interstitial diffusion in implanted molecular beam epitaxy silicon

Materials Research Society Symposium - Proceedings

Volumn 717, Issue , 2002, Pages 225-230

  De Salvador, D ^a   Mattoni, A ^a   Napolitani, E ^a   Drigo, A V ^a   Mirabella, S ^b   Priolo, F ^b  

^a UNIVERSITY OF PADOVA   (Italy)

^b UNIVERSITY OF CATANIA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; COMPOSITION; COMPUTER SIMULATION; DIFFUSION; DISSOLUTION; EVAPORATION; MOLECULAR BEAM EPITAXY; SEMICONDUCTOR DOPING; SURFACE PHENOMENA;

SELF-INTERSTITIAL DIFFUSION;

SEMICONDUCTING SILICON;

EID: 0036453146     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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