Spin polarized tunneling through single-crystal GaAs(001) barriers

Applied Physics Letters

Volumn 80, Issue 24, 2002, Pages 4582-4584

  Kreuzer, S ^a   Moser, J ^a   Wegscheider, W ^a   Weiss, D ^a   Bichler, M ^b   Schuh, D ^b  

^a UNIVERSITY OF REGENSBURG   (Germany)

^b WALTER SCHOTTKY INSTITUT   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BARRIER THICKNESS; ELECTRON TRANSPORT; EPITAXIAL GAAS; EXPONENTIAL DEPENDENCE; GAAS(001); HIGH-FIELD; NONLINEAR I-V CHARACTERISTICS; POLYCRYSTALLINE IRON; QUANTUM-MECHANICAL TUNNELING; SMALL SIZE; SPIN DEPENDENT TRANSPORT; SPIN-FLIP SCATTERING; SPIN-POLARIZED TUNNELING; TEMPERATURE DEPENDENCE; TUNNELING CURRENT; TUNNELING MAGNETORESISTANCE;

ELECTRIC RESISTANCE; EPITAXIAL FILMS; GALLIUM ARSENIDE; MAGNETOELECTRONICS; MAGNETORESISTANCE; QUANTUM THEORY; SEMICONDUCTING GALLIUM;

QUANTUM CHEMISTRY;

EID: 79956028713     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1486044     Document Type: Article

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