Nonmonotonic bias voltage dependence of the magnetocurrent in GaAs-based magnetic tunnel transistors

Physical Review Letters

Volumn 90, Issue 19, 2003, Pages

  Van Dijken, Sebastian ^a   Jiang, Xin ^b   Parkin, Stuart S P ^a  

^a IBM ALMADEN RESEARCH CENTER   (United States)

^b STANFORD UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENT MEASUREMENT; ELECTRON SCATTERING; ELECTRON TRANSPORT PROPERTIES; MAGNETIC SEMICONDUCTORS; SEMICONDUCTING GALLIUM ARSENIDE; THIN FILMS; VOLTAGE MEASUREMENT;

ELECTRON ANGULAR DISTRIBUTION; HOT ELECTRON TRANSPORT; MAGNETIC TUNNEL TRANSISTORS; MAGNETOCURRENT; NONMONOTONIC BIAS VOLTAGE;

TRANSISTORS;

EID: 0037595518     PISSN: 00319007     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (31)

1. G. Schönhense and H. C. Siegmann, Ann. Phys. (Leipzig) 2, 465 (1993).
2. M. Aeschlimann et al., Phys. Rev. Lett. 79, 5158 (1997).
3. D. Oberli et al., Phys. Rev. Lett. 81, 4228 (1998).
4. W. H. Rippard and R. A. Buhrman, Phys. Rev. Lett. 84, 971 (2000).
5. W. Weber, S. Riesen, and H.C. Siegman, Science 291, 1015 (2001).
6. R. Vlutter et al., Phys. Rev. Lett. 88, 027202 (2002).
7. W. J. Kaiser and L. D. Bell, Phys. Rev. Lett. 60, 1406 (1988).
8. L. J. Sohowalter and E. Y. Lee, Phys. Rev. B 43, 9308 (1991).
9. R. Ludeke and A. Bauer, Phys. Rev. Lett. 71, 1760 (1993).
10. L. D. Bell, Phys. Rev. Lett. 77, 3893 (1996).
11. F. J. Garcia-Vidal, P. L. d. Andres, and F. Flores, Phys. Rev. Lett. 76, 807 (1996).
12. D. K. Guthrie et al., Phys. Rev. B 54, 16 972 (1996).
13. D. L. Smith, E. Y. Lee, and V. Narayanamurti, Phys. Rev. Lett. 80, 2433 (1998).
14. D. L. Smith et al., Phys. Rev. B 61, 13 914 (2000).
15. K. Mizushima et al., IEEE Trans. Magn. 33, 3500 (1997).
16. R. Sato and K. Mizushima, Appl. Phys. Lett. 79, 1157 (2001).
17. S. van Dijken, X. Jiang, and S. S. P. Parkin, Appl. Phys. Lett. 80, 3364 (2002).
18. J. S. Blakemore, J. Appl. Phys. 53, R123 (1982).
19. The slightly smaller MC for GaAs(111) can be explained by small structural differences in tunnel junction growth on different GaAs facets.
20. The attenuation lengths extracted from base layer thickness dependent measurements of the collector current include both the effects of spin-dependent collection efficiency of the GaAs collector. By contrast the attenuation length defined here includes only the effect of spin-dependent scattering in the base layer.
21. S. van Dijkens, X. Jiang, and S. S. P. Parkin, Phys. Rev. B 66, 094417 (2002).
22. A. T. Filip et al., Phys. Rev. B 62, 9996 (2000).
23. F. G. Monzon and M. L. Roukes, J. Magn. Magn. Mater. 198-199, 632 (1999).
24. I. Turek et al., Phys. Rev. B 49, 3352 (1994).
25. H.-J. Drouhin, Phys. Rev. B 62, 556 (2000).
26. J. Hong and D. L. Mills, Phys. Rev. B 59, 13 840 (1999).
27. M. Plihal, D. L. Mills, and J. Kirschner, Phys. Rev. Lett. 82, 2579 (1999).
28. R. Jansen et al., Phys. Rev. Lett. 85, 3277 (2000).
29. Hot electron scattering by thermal spin waves is negligible at 77 K.
30. T. Yamauchi and K. Mizushima, Phys. Rev. B 61, 8242 (2000).
31. D. J. Monsma and S. S. P. Parkin (unpublished).