SCOPUS 정보 검색 플랫폼

Physical Review B - Condensed Matter and Materials Physics

Volumn 67, Issue 12, 2003, Pages 1213101-1213104

Spin injection into a ballistic semiconductor microstructure

(2) Kravchenko, Vladimir Ya a,d Rashba, Emmanuel I b,c

a ARGONNE NATIONAL LABORATORY (United States)

b UNIVERSITY AT BUFFALO (United States)

c MASSACHUSETTS INSTITUTE OF TECHNOLOGY (United States)

d INSTITUTE OF SOLID STATE PHYSICS (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

ACCELERATION; ARTICLE; CONDUCTANCE; DIFFUSION; MAGNETISM; MATHEMATICAL ANALYSIS; SEMICONDUCTOR;

EID: 0043154385 PISSN: 01631829 EISSN: None Source Type: Journal
DOI: None Document Type: Article

Times cited : (25)

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51
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52
- 33646600346
- note
- This procedure is similar to the γ technique (Ref. 8) that turned out to be efficient in the diffusive theory of spin injection.

53
- 33646619484
- note
- F≪ 1 and, therefore, can be disregarded.

54
- 33646629050
- note
- N remains intact.

55
- 0000548092
- J.C. Egues, Phys. Rev. Lett. 80, 4578 (1998); T. Koga et al., ibid. 88, 126601 (2002); E.A. de Andrada e Silva and G.C. La Rocca, Phys. Rev. B 59, R15 583 (1999); A. Voskoboynikov et al., ibid. 59, 12514 (1999).
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56
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57
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58
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59
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- In a different context, effective contact resistance was discussed by B. Laikhtman and S. Luryi, Phys. Rev. B 49, 17 177 (1994); J. Barnaś and A. Fert, ibid. 49, 12 835 (1994); A. Shpiro and P.M. Levy, ibid. 63, 014419 (2000).
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60
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61
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- Shpiro, A.¹ Levy, P.M.²

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