Micro-Auger electron spectroscopy studies of chemical and electronic effects at GaN-sapphire interfaces

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 22, Issue 6, 2004, Pages 2284-2289

  Sun, X L ^a   Bradley, S T ^a   Jessen, G H ^a,d   Look, D C ^b   Molnar, R J ^c   Brillson, L J ^a  

^a The Ohio State University   (United States)

^b WRIGHT STATE UNIVERSITY   (United States)

^c MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

^d AIR FORCE RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; CATHODOLUMINESCENCE; CHEMICAL BONDS; DIFFUSION; INTERDIFFUSION (SOLIDS); INTERFACES (MATERIALS); MICROELECTRONIC PROCESSING; REACTION KINETICS; SAPPHIRE; SCHOTTKY BARRIER DIODES; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR MATERIALS; ULTRAHIGH VACUUM;

ELECTRONIC INTERACTIONS; LATTICE DAMAGE; MICRO-AUGER ELECTRON SPECTROSCOPY; MICRO-CATHODOLUMINESCENCE;

GALLIUM NITRIDE;

EID: 10244241831     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1795820     Document Type: Article

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