Defect nucleation in SOI wafers due to hydrogen ion implantation

Theoretical and Applied Fracture Mechanics

Volumn 42, Issue 3, 2004, Pages 295-301

  Xu, M ^a   Feng, X Q ^a  

^a TSINGHUA UNIVERSITY   (China)

Author keywords

Defect nucleation; Fracture; Hydrogen ion implantation; Nanomechanics; Silicon on insulator; Smart Cut technology

Indexed keywords

CHEMICAL BONDS; DEFECTS; DENSITY (SPECIFIC GRAVITY); HYDROGEN; ION IMPLANTATION; MATHEMATICAL MODELS; NUCLEATION; PROBABILITY; SILICON ON INSULATOR TECHNOLOGY; SINGLE CRYSTALS;

DEFECT DENSITY; DEFECT NUCLEATION; HYDROGEN ION IMPLANTATION; MICROCAVITIES;

SILICON WAFERS;

DEFECT; FRACTURE MECHANICS; HYDROGEN; NANOTECHNOLOGY; NUCLEATION; SILICON;

EID: 10244236571     PISSN: 01678442     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tafmec.2004.09.004     Document Type: Article

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