Fabrication of silicon-on-AlN novel structure and its residual strain characterization

Journal of Crystal Growth

Volumn 244, Issue 1, 2002, Pages 27-32

  An, Zhenghua ^a,c   Men, Chuanling ^b   Xie, Xinyun ^a   Zhang, Miao ^a   Chu, Paul K ^c   Lin, Chenglu ^a  

^a SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY   (China)

^b TONGJI UNIVERSITY   (China)

^c CITY UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

A1. High resolution X ray diffraction; A3. Ion beam enhanced depostion; B1. Nitrides

Indexed keywords

ALUMINUM NITRIDE; ELECTRIC POWER UTILIZATION; HIGH RESOLUTION ELECTRON MICROSCOPY; ION BEAMS; SILICA; SYNTHESIS (CHEMICAL); TRANSMISSION ELECTRON MICROSCOPY;

HIGH POWER CONSUMPTION;

SILICON ON INSULATOR TECHNOLOGY;

EID: 0036723289     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(02)01575-0     Document Type: Article

References (15)