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Physical Review Letters

Volumn 86, Issue 16, 2001, Pages 3598-3601

Effect of anisotropic strain on the crosshatch electrical activity in relaxed GeSi films

(4) Gray, M H a Hsu, J W b Giovane, L c Bulsara, M T d

a University of Virginia (United States)

b LUCENT TECHNOLOGIES (United States)

c AGILENT TECHNOLOGIES (United States)

d AmberWave Inc (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; COMPOSITION; COMPUTER SIMULATION; DISLOCATIONS (CRYSTALS); ELECTRIC PROPERTIES; OPTICAL MICROSCOPY; PHOTOCURRENTS; POLARIZATION; SEMICONDUCTING GERMANIUM COMPOUNDS; SEMICONDUCTOR JUNCTIONS; STRAIN;

CROSSHATCH ELECTRICAL ACTIVITY; GERMANIUM SILICIDE; JUNCTION DEPTH VARIATION; SCANNING ARTIFACTS; SCANNING OPTICAL MICROSCOPE;

SEMICONDUCTING FILMS;

EID: 18344401402 PISSN: 00319007 EISSN: None Source Type: Journal
DOI: 10.1103/PhysRevLett.86.3598 Document Type: Article

Times cited : (14)

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