Evaluation of strain induced by implantation in SOI materials

Physica Status Solidi C: Conferences

Volumn , Issue 3, 2003, Pages 1060-1065

  Tiberj, A ^a   Fraisse, B ^b   Blanc, C ^a   Contreras, S ^a   Camassel, J ^a  

^a UNIV MONTPELLIER   (France)

^b LABORATOIRE STRUCTURES   (France)

Author keywords

[No Author keywords available]

Indexed keywords

BULK MATERIALS; DOPING LEVELS; IMPLANTATION DAMAGE; STRAIN INDUCED;

SEMICONDUCTOR DOPING; SEMICONDUCTOR MATERIALS;

ELECTRIC PROPERTIES;

EID: 0038528139     PISSN: 16101634     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1002/pssc.200306240     Document Type: Conference Paper

References (22)

1. A. Erbil, W. Weber, G. S. Cargill III, and R. F. Boehme, Phys. Rev. B 34, 1392 (1986).
2. K. C. Pandey, A. Erbil, G. S. Cargill III, and R. F. Boehme, Phys. Rev. Lett. 61, 1282 (1988).
3. G. S. Cargill III, J. Angilello, and K. L. Kavanagh, Phys. Rev. Lett. 61, 1748 (1988).
4. K. L. Kavanagh and Cargill 3rd G.S., Phys. Rev. B 45, 3323 (1992).
5. V. S. Speriosu, J. Appl. Phys. 52, 6094 (1981).
6. M. Nemiroff and V. S. Speriosu, J. Appl. Phys. 58, 3735 (1985).
7. G. Y. Tong and V. Gosele, Semiconductor Wafer Bonding: Science and Technology, The Electrochemical Society Series (Wiley, New York, 1999).
8. J. Camassel, L. A. Falkovsky, and N. Planes, Phys. Rev. B 63, 35309 (2001).
9. M. Bruel, Electron. Lett. 58, 1284 (1999).
10. Silicon-On-Insulator Technology, MRS Bull. 23, 35 (1998).
11. I. de Wolf, Semicond. Sci. Technol. 11, 139 (1996).
12. J. T. Fitch, C. H. Bjorkman, G. Lucovsky, F. H. Pollak, and X. Yin, J. Vac. Sci. Technol. B 7, 775 (1989).
13. C. H. Bjorkman, J. T. Fitch, and G. Lucovsky, Appl. Phys. Lett. 56, 1983 (1990).
14. S. Kimura and A. Ogura, Jpn. J. Appl. Phys. 37, 1282 (1998).
15. International Radiocrystalography Tables, 1962.
16. J. P. Biersack and L. Haggmark, Nucl. Instrum. Methods 174, 257 (1980).
17. J. F. Ziegler, The Stopping and Range of Ions in Matter, Vol. 2/6 (Pergamon Press, London/Oxford, 1977-1985).
18. R. Hull, Properties of Crystalline Silicon, (The Institution of Electrical Engineers (INSPEC), London, 1999).
19. J. A. Van Vechten and J. C. Phillips, Phys. Rev. B 2, 2160 (1970).
20. G. Baccarani and P. Ostoja, Solid State Electron. 18, 579 (1975).
21. C. L. Huang, H. R. Soleimani, G. J. Grula, J. W. Sleight, A. Villani, H. Ali, and D. A. Antoniadis, IEEE Trans. Electron. Devices 44, 646 (1997).
22. J. W. Sleight, C. Lin, and G. J. Grula, IEEE Electron. Device Lett. 20, 248 (1999).