Characterization of strain in Si1-xGex films using multiple angle of incidence ellipsometry

Applied Physics Letters

Volumn 77, Issue 22, 2000, Pages 3529-3531

  Mukerjee, Subroto ^a   Venkataraman, V ^a  

^a INDIAN INSTITUTE OF SCIENCE   (India)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0003105109     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1329165     Document Type: Article

References (19)

1. D. C. Houghton, C. J. Gibbings, C. G. Tuppen, M. H. Lyons, and M. A. G. Halliwell, Appl. Phys. Lett. 56, 460 (1990).
2. D. C. Houghton, C. J. Gibbings, C. G. Tuppen, M. H. Lyons, and M. A. G. Halliwell, Thin Solid Films 183, 171 (1989).
3. J. Humliček, M. Garriga, M. I. Alonso, and M. Cardona, J. Appl. Phys. 65, 2827 (1989).
4. R. Loo, M. Caymax, M. Libenzy, G. Blavier, B. Brijs, L. Geenen, and W. Vandervost, J. Electrochem. Soc. 147, 751 (2000).
5. C. Pickering, R. T. Carline, D. J. Robbins, W. Y. Leong, S. J. Barnett, A. D. Pitt, and A. G. Cullis, J. Appl. Phys. 73, 239 (1993).
6. W. Seidel, P. Voisin, J. P. Andre, and F. Bogani, Solid-State Electron. 40, 729 (1996).
7. S. C. Jain, Germanium-Silicon Strained Layers and Heterostructures (Academic, New York, 1994), p. 22.
8. M. Fukuzuwa and M. Yamada, Proc. SPIE 2873, 250 (1996).
9. T. Chu and M. Yamada, Proceeding of the Seventh International Conference on Defect Recognition and Image Processing in Semiconductors (DRIP VII), 1998, pp. 129-132.
10. M. Robillard, P. E. Jessop, D. M. Bruce, S. Janz, R. L. Williams, S. Mailhot, H. Lafontaine, S. J. Kovacic, and J. J. Ojha, J. Vac. Sci. Technol. B 16, 1773 (1998).
11. R. M. Azzam and N. M. Bashara, Ellipsometry and Polarized Light (North-Holland, Amsterdam, 1977), p. 356.
12. W. H. Press, S. A. Teukolsky, W. T. Vetterling, and B. P. Flannery, Numerical Recipes in C (Cambridge University Press, 1996), pp. 451-455.
13. P. Narozny, H. Dämkes, H. Kibbel, and E. Kasper, IEEE Trans. Electron Devices 36, 2363 (1989).
14. B. Tillack, P. Zaumsell, G. Morgenstern, D. Krüger, and G. Ritter, Appl. Phys. Lett. 67, 1143 (1995).
15. H. J. Herzog, L. Csepregi, and H. Seidel, J. Electrochem. Soc. 131, 2969 (1984).
16. A. Feldman, R. M. Waxler, and D. Horowitz, J. Appl. Phys. 49, 2589 (1978).
17. C. W. Higginbotham, M. Cardona, and F. H. Pollak, Phys. Rev. 184, 821 (1969).
18. Ž. Matutinović-Krstelj, V. Venkataraman, E. J. Prinz, J. C. Sturm, and C. W. Magee, IEEE Trans. Electron Devices 43, 457 (1996).
19. V. Venkataraman, P. V. Schwartz, and J. C. Sturm, Appl. Phys. Lett. 59, 2871 (1991).