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Volumn 469-470, Issue SPEC. ISS., 2004, Pages 178-183

Effect of carrier gas on the structure and electrical properties of low dielectric constant SiCOH film using trimethylsilane prepared by plasma enhanced chemical vapor deposition

(9) Cheng, Y L a Wang, Y L b,c Lan, J K b Chen, H C b Lin, J H b Wu, Y L c Liu, P T a,d Wu, Y C a Feng, M S a

a NATIONAL CHIAO TUNG UNIVERSITY (Taiwan)

b TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY (Taiwan)

c NATIONAL CHI NAN UNIVERSITY (Taiwan)

d NATIONAL NANO DEVICE LABORATORIES (Taiwan)

Author keywords

Carrier gas; Low k; Plasma enhanced chemical vapor deposition

Indexed keywords

CARBON; CHEMICAL BONDS; DOPING (ADDITIVES); ELECTRIC INSULATING MATERIALS; FOURIER TRANSFORM INFRARED SPECTROSCOPY; HARDNESS; LEAKAGE CURRENTS; MICROPOROSITY; PERMITTIVITY; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; REACTION KINETICS; SILANES; X RAY PHOTOELECTRON SPECTROSCOPY;

CARRIER GASES; LOW-Κ FILMS; TRIMETHYLSILANES;

DIELECTRIC FILMS;

EID: 10044290637 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/j.tsf.2004.08.159 Document Type: Article

Times cited : (16)

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