Diagnostics of doping integrity in n+/p/n+ transistor-channel structure by scanning nonlinear dielectric microscopy

Applied Physics Letters

Volumn 84, Issue 16, 2004, Pages 3169-3171

  Matsukawa, Takashi ^a   Yasumuro, Chiaki ^a   Masahara, Meishoku ^a   Tanoue, Hisao ^a   Kanemaru, Seigo ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CARRIER CONCENTRATION; CHARGE CARRIERS; CURRENT VOLTAGE CHARACTERISTICS; DIELECTRIC MATERIALS; DOPING (ADDITIVES); ELECTRON BEAM LITHOGRAPHY; ION IMPLANTATION; NONLINEAR SYSTEMS; SPECTROSCOPIC ANALYSIS; THRESHOLD VOLTAGE;

DOPING CONCENTRATION; NONLINEAR CAPACITANCE; SCANNING NONLINEAR DIELECTRIC MICROSCOPY (SNDM); TRANSISTOR CHANNEL STRUCTURE;

TRANSISTORS;

EID: 2442530441     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1707224     Document Type: Article

References (6)

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