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Volumn 85, Issue 18, 2004, Pages 4115-4117

Interfacial reaction depending on the stack structure of Al 2O3 and HfO2 during film growth and postannealing

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; DEPOSITION; FILM GROWTH; HAFNIUM COMPOUNDS; INTERFACES (MATERIALS); SILICON; STOICHIOMETRY; THERMAL EFFECTS;

ATOMIC-LAYER DEPOSITION; CHEMICAL STATE; INTERFACIAL REACTIONS; STACK STRUCTURE;

ALUMINUM COMPOUNDS;

EID: 10044261119 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.1807968 Document Type: Article

Times cited : (21)

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