LWIR MBE HgCdTe photovoltaic detectors grown on Si composite substrates

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5406, Issue PART 1, 2004, Pages 323-331

  Wijewarnasuriya, P S ^a   Brill, G ^a   Chen, Y P ^a   Dhar, N K ^a   Velicu, S ^b  

^a U S ARMY RESEARCH LABORATORY   (United States)

^b EPIR TECHNOLOGIES INC   (United States)

Author keywords

CdSeTe; CdTe Si; HgCdTe; Infrared detectors; LWIR; Molecular beam epitaxy

Indexed keywords

CDSETE; CDTE/SI; HGCDTE; LWIR;

ETCHING; HALL EFFECT; INFRARED DETECTORS; MOLECULAR BEAM EPITAXY; OPTIMIZATION; PHOTOVOLTAIC EFFECTS;

MERCURY COMPOUNDS;

EID: 10044230609     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.541606     Document Type: Conference Paper

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