Molecular-beam epitaxial growth of HgCdTe infrared focal-plane arrays on silicon substrates for midwave infrared applications

Journal of Electronic Materials

Volumn 27, Issue 6, 1998, Pages 550-555

  De Lyon, T J ^a   Rajavel, R D ^a   Vigil, J A ^a   Jensen, J E ^a   Wu, O K ^a   Cockrum, C A ^b   Johnson, S M ^b   Venzor, G M ^b   Bailey, S L ^b   Kasai, I ^b   Ahlgren, W L ^b   Smith, M S ^b  

^a Hughes Aircraft Co   (United States)

^b Santa Barbara Research Center   (United States)

Author keywords

CdTe; CdTe Si; Focal plane arrays (FPAs); Heteroepitiaxy; HgCdTe; HgCdTe Si; Infared detectors; Molecular beam epitaxy (MBE)

Indexed keywords

EID: 0001652941     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-998-0014-6     Document Type: Article

References (11)

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