HgCdTe and CdTe(113)B growth on Si(112)5° off by molecular beam epitaxy

Applied Physics Letters

Volumn 69, Issue 19, 1996, Pages 2876-2878

  Kawano, M ^a   Ajisawa, A ^a   Oda, N ^a   Nagashima, M ^b   Wada, H ^b  

^a NEC CORPORATION   (Japan)

^b JAPAN DEFENSE AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0042581922     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.117348     Document Type: Article

References (13)

1. Y. Lo, R. N. Bicknell, T. H. Myers, and J. F. Schetzina, J. Appl. Phys. 54, 4238 (1983).
2. R. Sporken, S. Sivananthan, K. K. Mahavadi, G. Monfroy, M. Boukerche, and J. P. Faurie, 55, 1879 (1989).
3. Y. P. Chen, J. P. Faune, and S. Sivananthan, J. Electron. Mater. 24, 475 (1995).
4. T. J. de Lyon, D. Rajavel, S. M. Johnson, and C. A. Cockrum, Appl. Phys. Lett. 66, 2119 (1995).
5. T. J. de Lyon, D. Rajavel, O. K. Wu, S. M. Johnson, C. A. Cockrum, and G. M. Venzor, Proc. SPIE 2554, 25 (1995).
6. I. Sugiyama and Yoshito Nishijima, Appl. Phys. Lett. 66, 2798 (1995).
7. M. Kawano, Japan Patent Appl. No. 332516 (1994).
8. M. Kawano, T. Sasaki, and N. Oda, J. Electron. Mater. 24, 431 (1995).
9. J. S. Chen, U.S. Patent, No. 4,897,152 (1990).
10. P. D. Brown, K. Durose, G. J. Russell, and J. Woods, J. Cryst. Growth 101, 211 (1990).
11. T. Sasaki and N. Oda, J. Appl. Phys. 78, 3121 (1995).
12. A. Ajisawa and N. Oda, J. Electron. Mater. 24, 1105 (1995).
13. M. Kawano, Japan Patent Appl. No. 238800 (1994).