Key performance-limiting defects in P-on-N HgCdTe LPE heterojunction infrared photodiodes

Journal of Electronic Materials

Volumn 25, Issue 8, 1996, Pages 1375-1382

  Chen, M C ^a   List, R S ^a   Chandra, D ^a   Bevan, M J ^a   Colombo, L ^a   Schaake, H F ^a  

^a TEXAS INSTRUMENTS   (United States)

Author keywords

Defects; Double layer heterojunction (DLHJ); HgCdTe; Liquid phase epitaxy (LPE); Metallurgical defects; P on n diodes

Indexed keywords

EID: 0000938565     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/BF02655037     Document Type: Article

References (10)

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