Highly selective etching of GaAs on Al0.2Ga0.8

Electrochemical and Solid-State Letters

Volumn 7, Issue 11, 2004, Pages

  Liao, Chin I ^a   Houng, Mau Phon ^a   Wang, Yeong Her ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; ATOMIC FORCE MICROSCOPY; ETCHING; HETEROJUNCTIONS; LEAKAGE CURRENTS; OHMIC CONTACTS; ORGANIC ACIDS; SEMICONDUCTING ALUMINUM COMPOUNDS; TRANSISTORS; WATER;

ETCHING INFERENCE; GATE LEAKAGE CURRENTS; ION-INDUCED DAMAGE; PSEUDOMORPHIC HIGH ELECTRON MOBILITY TRANSISTORS (PHEMT);

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 10044228333     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1803072     Document Type: Article

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