Residual arsenic site in oxidized AlxGa1-xAs (x=0.96)

Applied Physics Letters

Volumn 78, Issue 17, 2001, Pages 2458-2460

  Cheong, S K ^a   Bunker, B A ^a   Shibata, T ^a   Hall, D C ^b   DeMelo, C B ^b   Luo, Y ^b   Snider, G L ^b   Kramer, G ^c   El Zein, N ^c  

^a UNIVERSITY OF NOTRE DAME   (United States)

^b University of Notre Dame   (United States)

^c MOTOROLA INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0035938307     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1367307     Document Type: Article

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