A Novel Technology to Form Self-Aligned Emitter Ledge for Heterojunction Bipolar Transistors

IEEE Electron Device Letters

Volumn 24, Issue 10, 2003, Pages 628-630

  Wang, Hong ^a   Ng, Geok Ing ^a  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

Author keywords

Emitter ledge passivation; Heterojunction; Heterojunction bipolar transistor (HBT); Transistor

Indexed keywords

ETCHING; PASSIVATION; PLASMAS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SILICA; SILICON NITRIDE;

EMITTERS;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0141883948     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2003.817874     Document Type: Article

References (6)

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