Bulk micromachining characterization of 0.2 μm HEMT MMIC technology for GaAs MEMS design

Materials Science and Engineering B

Volumn 51, Issue 1-3, 1998, Pages 267-273

  Ribas, R P ^a   Leclercq, J L ^b   Karam, J M ^a   Courtois, B ^a   Viktorovitch, P ^b  

^a TIMA LABORATORY   (France)

^b ECOLE CENTRALE DE LYON   (France)

Author keywords

Gallium arsenide; HEMT technology; MEMS; Micromachining; Wet etching

Indexed keywords

AMMONIUM COMPOUNDS; ETCHING; HIGH ELECTRON MOBILITY TRANSISTORS; INORGANIC ACIDS; INTERMETALLICS; MICROMACHINING; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; ORGANIC ACIDS; PHOSPHORUS COMPOUNDS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE;

ALUMINUM GALLIUM ARSENIDE; AMMONIUM HYDROXIDE; CITRIC ACID; PHOSPHORIC ACID;

MICROELECTROMECHANICAL DEVICES;

EID: 0032003164     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(97)00282-1     Document Type: Article

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