Selective wet etching for highly uniform GaAs/Al0.15Ga0.85As heterostructure field effect transistors

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 15, Issue 1, 1997, Pages 167-170

  Kitano, T ^a   Izumi, S ^a   Minami, H ^a   Ishikawa, T ^a   Sato, K ^a   Sonoda, T ^a   Otsubo, M ^a  

^a MITSUBISHI ELECTRIC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0013128562     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (11)

1. P. M. Smith, P. C. Chao, J. M. Ballingall, and A. W. Swanson, Microwave J. 71 (1990).
2. S. Tiwari, IEEE Trans. Electron Devices 33, 554 (1986).
3. A. A. Ketterson, E. Andideh, I. Adesida, T. L. Brock, J. Baillargeon, J. Lasker, K. Y. Cheng, and J. Kolodzey, J. Vac. Sci. Technol. B 7, 1493 (1989).
4. W. H. Guggina, A. A. Ketterson, E. Andideh, J. Hughes, I. Adesida, S. Caracci, and J. Kolodzey, J. Vac. Sci. Technol. B 8, 1956 (1990).
5. S. Sailman, C. Yuen, C. Shih, and C. B. Cooper, J. Vac. Sci. Technol. B 9, 114 (1991).
6. R. A. Logan and F. K. Reinhart, J. Appl. Phys. 44, 4172 (1973).
7. K. Kenefick, J. Electrochem. Soc. 129, 2380 (1982).
8. C. Juang, K. J. Kuhn, and R. B. Darling, J. Vac. Sci. Technol. B 8, 1122 (1990).
9. M. Tong, D. G. Ballegeer, A. A. Ketterson, E. J. Roan, K. Y. Cheng, and I. Adesida, J. Electron. Mater. 21, 9 (1992).
10. J. A. Taylor, J. Vac. Sci. Technol. 20, 751 (1982).
11. Y. Imai and K. Ohwada, J. Vac. Sci. Technol. B 5, 889 (1987).