Fabrication of 3 nm wires using 100 keV electron beam lithography and poly(methyl methacrylate) resist

Applied Physics Letters

Volumn 68, Issue 3, 1996, Pages 322-324

  Cumming, D R S ^a   Thoms, S ^a   Beaumont, S P ^a   Weaver, J M R ^a  

^a UNIVERSITY OF GLASGOW   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001221538     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.116073     Document Type: Article

References (7)

1. A. N. Broers, IBM J. Res. Dev. INS 32, 502 (1988).
2. S. P. Beaumont, P. G. Bower, T. Tamamura, and C. D. W. Wilkinson, Appl. Phys. Lett. AIP 38, 436 (1981).
3. H. G. Craighead, R. E. Howard, L. D. Jackel, and P. M. Mankiewich, Appl. Phys. Lett. AIP 42, 38 (1983).
4. S. A. Rishton, Ph.D. thesis, University of Glasgow, 1984.
5. W. Chen and H. Ahmed, Appl. Phys. Lett. s AIP 62, 1499 (1993).
6. W. Chen and H. Ahmed, J. Vac. Sci. Technol. B AIP 11, 2519 (1993).
7. S. Thoms, S. P. Beaumont, and C. D. W. Wilkinson, J. Vac. Sci. Technol. B AIP 7, 1823 (1989).