Combined photoluminescence study of substrate defects in Hg 1-xCdxI2/CdTe heterostructures

Journal of Crystal Growth

Volumn 262, Issue 1-4, 2004, Pages 191-195

  Sochinskii, N V ^a,c   Babentsov, V N ^b,c   Fiederle, M ^b  

^a INSTITUTO DE MICROELECTRÓNICA DE MADRID   (Spain)

^b UNIVERSITY OF FREIBURG   (Germany)

^c INSTITUTE OF SEMICONDUCTOR PHYSICS   (Ukraine)

Author keywords

A1. Defects; A3. Vapor phase epitaxy; B1. Cadmium compounds; B2. Semiconducting II VI materials

Indexed keywords

CORRELATION METHODS; CRYSTAL GROWTH; DOPING (ADDITIVES); ENERGY GAP; HETEROJUNCTIONS; LASER BEAMS; PHOTOLUMINESCENCE; POLYCRYSTALLINE MATERIALS; PRECIPITATION (CHEMICAL); SCANNING ELECTRON MICROSCOPY; VAPOR PHASE EPITAXY;

PHOTO CAMERA; SEMICONDUCTING II-IV MATERIALS; SHARP LAYERS;

CADMIUM COMPOUNDS;

EID: 0842265194     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2003.10.005     Document Type: Article

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