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Journal of Crystal Growth

Volumn 243, Issue 1, 2002, Pages 77-86

Defect structure of Ge-doped CdTe

(7) Fiederle, M a Babentsov, V a Franc, J a Fauler, A a Benz, K W a James, R B b Cross, E c

a UNIVERSITY OF FREIBURG (Germany)

b BROOKHAVEN NATIONAL LABORATORY (United States)

c SANDIA NATIONAL LABORATORIES (United States)

Author keywords

A2. Bridgman technique; B1. Cadmium compounds; B2. Semiconducting II VI materials

Indexed keywords

CRYSTAL STRUCTURE; ELECTRON ENERGY LEVELS; PHOTOSENSITIVITY; SEMICONDUCTING CADMIUM TELLURIDE; SEMICONDUCTOR DOPING;

DEFECT STRUCTURES; RECOMBINATION PROCESSES;

CRYSTAL DEFECTS;

EID: 0036071808 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(02)01479-3 Document Type: Article

Times cited : (50)

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