Associates formation in CdTe at high levels of native point defects

Journal of Crystal Growth

Volumn 184-185, Issue , 1998, Pages 1155-1159

  Savitsky, A ^a   Parfenyuk, O ^a   Ilashchuk, M ^a   Fochouk, P ^a   Burachek, V ^a  

^a CHERNIVTSI NATIONAL UNIVERSITY   (Ukraine)

Author keywords

Associates; Cadmium telluride; Energetic levels; Hall mobility; Point defects

Indexed keywords

EID: 11544268302     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0022-0248(98)80242-x     Document Type: Article

References (8)

1. Y. Mairfaing, J. Crystal Growth 161 (1996) 205-213.
2. Y. Mairfaing, Prog. Crystal Growth Charact. 4 (1981) 317-343.
3. T. Taguchi, B. Ray, Prog. Crystal Growth Charact. 6 (1983) 103-162.
4. P. Höschl, R. Grill, J. Franc, P. Moravec, E. Belas, Mater. Sci. Eng. B 16 (1993) 215-218.
5. G. Neu, Y. Mairfaing, R. Legros, R. Triboulet, L. Schaub, J. Lumin. 21 (1980) 293-304.
6. T. Takebe, T. Hirata, J. Saraie, H. Matsunami, J. Phys. Chem. Soc. 43 (1982) 5-12.
7. A.D. Boardman, Proc. Phys. Soc. 85 (1965) 141-148.
8. B.H. Reiss, C.S. Fuller, F.J. Morin, Bell. Syst. Technol. 35 (1956) 535-635.