Effect of α-HgI2 epitaxial growth on the defect structure of CdTe:Ge substrates

Applied Physics Letters

Volumn 70, Issue 7, 1997, Pages 877-879

  Panin, G ^a,c   Piqueras, J ^a   Sochinskii, N ^b,d,e   Dieguez, E ^b  

^a UNIVERSIDAD COMPLUTENSE DE MADRID   (Spain)

^b UNIVERSIDAD AUTÓNOMA DE MADRID   (Spain)

^c INSTITUTE OF MICROELECTRONICS TECHNOLOGY AND HIGH PURITY MATERIALS   (Russian Federation)

^d INSTITUTE OF SEMICONDUCTOR PHYSICS   (Ukraine)

^e New Semiconductors   (Ukraine)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0343577805     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.118237     Document Type: Article

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