Structural defects in Hg1-xCdxI2 layers grown on CdTe substrates by vapor phase epitaxy

Journal of Applied Physics

Volumn 82, Issue 10, 1997, Pages 4889-4891

  Sochinskii, N V ^a,d,e   Munoz V ^a   Espeso, J I ^b,f   Baruchel, J ^b   Marin C ^c   Dieguez E ^c  

^a UNIVERSITY OF VALENCIA   (Spain)

^b EUROPEAN SYNCHROTRON RADIATION FACILITY   (France)

^c UNIVERSIDAD AUTÓNOMA DE MADRID   (Spain)

^d INSTITUTE OF SEMICONDUCTOR PHYSICS   (Ukraine)

^e New Semiconductors   (Ukraine)

^f UNIVERSITY OF CANTABRIA   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

BULK CRYSTALS; CDTE; GROWTH TIME; HIGH RESOLUTION; LAYER STRUCTURES; LOW DEFECT DENSITIES; POLYCRYSTALLINE; SEM; STRUCTURAL DEFECT; SUBGRAIN BOUNDARIES; SYNCHROTRON X RAYS; THICK LAYERS; TIME RANGE;

CADMIUM ALLOYS; CADMIUM COMPOUNDS; CRYSTALLOGRAPHY; DEFECT DENSITY; HIGH RESOLUTION ELECTRON MICROSCOPY; MERCURY (METAL); SCANNING ELECTRON MICROSCOPY; VAPOR PHASE EPITAXY; VAPORS;

DEFECTS;

EID: 0342851067     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.366352     Document Type: Article

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