Vapor phase epitaxy of Hg1-xCdxI2 on sapphire

Journal of Crystal Growth

Volumn 192, Issue 1-2, 1998, Pages 342-345

  Sochinskii, N V ^a,b,c   Reig, C ^a   Munoz V ^a   Alamo, J ^a  

^a UNIVERSITY OF VALENCIA   (Spain)

^b INSTITUTE OF SEMICONDUCTOR PHYSICS   (Ukraine)

^c New Semiconductors   (Ukraine)

Author keywords

Hg1 xCdxI2 layers; Structure; Vapor phase epitaxy

Indexed keywords

CRYSTAL STRUCTURE; ENERGY DISPERSIVE SPECTROSCOPY; MERCURY COMPOUNDS; METALLORGANIC VAPOR PHASE EPITAXY; POLYCRYSTALLINE MATERIALS; SAPPHIRE; SCANNING ELECTRON MICROSCOPY; X RAY CRYSTALLOGRAPHY;

CRYSTALLOGRAPHIC STRUCTURE; LAYER GROWTH;

VAPOR PHASE EPITAXY;

EID: 0032474957     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)00431-X     Document Type: Article

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