Basic principles of postgrowth annealing of CdTe:Cl ingot to obtain semi-insulating crystals

Semiconductors

Volumn 34, Issue 11, 2000, Pages 1264-1269

  Matveev, O A ^a   Terent'ev, A I ^a  

^a IOFFE INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0034310957     PISSN: 10637826     EISSN: None     Source Type: Journal    
DOI: 10.1134/1.1325420     Document Type: Article

References (31)

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