Optical characterization of GaN films grown on (0001) sapphire substrate

Materials Research Society Symposium - Proceedings

Volumn 423, Issue , 1996, Pages 747-752

  Yang, K ^a   Zhang, R ^a   Zheng, Y D ^a   Qin, L H ^a   Shen, B ^a   Shi, H T ^a   Huang, Z C ^a   Chen, J C ^a  

^a NANJING UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; ENERGY GAP; FILM GROWTH; LIGHT TRANSMISSION; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NITRIDES; OPTICAL PROPERTIES; RAMAN SCATTERING; REFRACTIVE INDEX; SAPPHIRE; SEMICONDUCTING GALLIUM COMPOUNDS; SINGLE CRYSTALS;

GALLIUM NITRIDE; LINE SHAPE FITTING; PHOTOREFLECTANCE;

SEMICONDUCTING FILMS;

EID: 0030413775     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-423-747     Document Type: Conference Paper

References (13)