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Japanese Journal of Applied Physics, Part 2: Letters

Volumn 42, Issue 12 A, 2003, Pages

Fast grain growth of metal-induced lateral crystallization of amorphous silicon using rapid energy transfer annealing

(4) Jiang, Yeu Long a Chen, Chi Lin b Lin, Chiung Wei c Huang, Shun Fa b

a NATIONAL CHUNG HSING UNIVERSITY (Taiwan)

b INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE (Taiwan)

c TATUNG UNIVERSITY (Taiwan)

Author keywords

Amorphous silicon; Grain growth; Nickel metal induced lateral crystallization (MILC); Polysilicon; Rapid energy transfer annealing

Indexed keywords

ANNEALING; CRYSTALLIZATION; ENERGY DISPERSIVE SPECTROSCOPY; GRAIN GROWTH; HIGH TEMPERATURE EFFECTS; NICKEL; NUCLEATION; POLYSILICON; RELAXATION PROCESSES; SCANNING ELECTRON MICROSCOPY; TRANSMISSION ELECTRON MICROSCOPY;

METAL INDUCED LATERAL CRYSTALLIZATION; NICKEL SILICIDE; RAPID ENERGY TRANSFER ANNEALING;

AMORPHOUS SILICON;

EID: 0742268935 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.42.l1416 Document Type: Letter

Times cited : (1)

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