Study of grain growth of polysilicon formed by nickel-induced-lateral-crystallization of amorphous silicon and subsequent high temperature annealing

Thin Solid Films

Volumn 406, Issue 1-2, 2002, Pages 17-22

  Qin, Ming ^a,b   Poon, M C ^a   Fan, L J ^b   Chan, M ^a   Yuen, C Y ^a   Chan, W Y ^a  

^a HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

^b SOUTHEAST UNIVERSITY   (China)

Author keywords

Grains; Nickel; NILC; TEM

Indexed keywords

AMORPHOUS SILICON; ANNEALING; ATOMIC FORCE MICROSCOPY; CRYSTAL DEFECTS; CRYSTALLIZATION; GRAIN BOUNDARIES; GRAIN GROWTH; HEAT TREATMENT; NICKEL; RAMAN SPECTROSCOPY; THERMAL EFFECTS; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY;

NICKEL-INDUCED LATERAL CRYSTALLIZATION (NILC);

POLYSILICON;

EID: 0037051209     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(01)01722-9     Document Type: Article

References (14)