Polycrystalline silicon prepared by metal induced crystallization

Thin Solid Films

Volumn 440, Issue 1-2, 2003, Pages 1-4

  Choi, Jong Hyun ^a   Kim, Do Young ^a   Kim, Seung Soo ^a   Park, Seong Jin ^a   Jang, Jin ^a  

^a Kyung Hee University   (South Korea)

Author keywords

Diffusion; Nickel; Silicon; Surface energy

Indexed keywords

AGGLOMERATION; AMORPHOUS SILICON; CRYSTALLIZATION; DIFFUSION; GRAIN BOUNDARIES; GRAIN SIZE AND SHAPE; INTERFACIAL ENERGY; METALS; PRECIPITATION (CHEMICAL); RAPID THERMAL ANNEALING;

METAL PLASMA;

POLYSILICON;

EID: 0042122305     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(03)00821-6     Document Type: Article

References (12)

1. Yoon S.Y., Park S.J., Kim K.H., Jang J. Thin Solid Films. 383:2001;34.
2. Sposili R.S., Im J.S. Appl. Phys. Lett. 69:1996;2864.
3. Girginoudi S., Girginoudi D., Thanailakis A., Georgoulas N. J. Appl. Phys. 84:1998;1968.
4. T. Noguchi, S. Usui, D.P. Gosain, Y. Ikeda, Materials Research Society MRS Proceedings, 557 (1999) 213.
5. Im J.S., Kim H.J. Appl. Phys. Lett. 64:1994;2303.
6. Jagar S., Chan M., Wang H., Poon V.M.C., Myansnikov A.M. Solid State Electron. 45:2001;743.
7. Jang J., Park S.J., Kim K.H., Cho B.R., Kwak W.K., Yoon S.Y. J. Appl. Phys. 88:2000;3099.
8. Jang J., Oh J.Y., Kim S.K., Choi Y.J., Yoon S.Y., Kim C.O. Nature. 395:1998;481.
9. Lam L.K., Chen S.K., Ast D.G. Appl. Phys. Lett. 74:1999;1866.
10. Jaccodin R.J. J. Electrochem. Soc. 110:1963;524.
11. Jin Z., Bhat G.A., Yeung M., Kwok H.S., Wong M. J. Appl. Phys. 84:1998;194.
12. Meng Z., Wang M., Wong M. IEEE Trans. Electron devices. 47:2000;404.