Ultrafast directional nickel-silicide-induced crystallization of amorphous silicon under high-density current stressing

Applied Physics Letters

Volumn 82, Issue 12, 2003, Pages 1857-1859

  Yu, C H ^a   Lin, H H ^a   Cheng, S L ^a   Chen, L J ^a  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTALLIZATION; CURRENT DENSITY; ELECTRIC FIELD EFFECTS; EPITAXIAL GROWTH; OPTICAL MICROSCOPY; PHOTOLITHOGRAPHY; POLYCRYSTALLINE MATERIALS; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY;

METAL-INDUCED CRYSTALLIZATION (MIC); NANOWIRES;

AMORPHOUS SILICON;

EID: 0037464251     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1563060     Document Type: Article

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